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MIE-526A2U 参数 Datasheet PDF下载

MIE-526A2U图片预览
型号: MIE-526A2U
PDF下载: 下载PDF文件 查看货源
内容描述: 铝镓砷/砷化镓T-1 3/4封装红外发光二极管 [AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE]
分类和应用: 二极管
文件页数/大小: 2 页 / 33 K
品牌: UOT [ UNITY OPTO TECHNOLOGY ]
 浏览型号MIE-526A2U的Datasheet PDF文件第2页  
AlGaAs/GaAs T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-526A2U is infrared emitting diodes in
GaAs technology with AlGaAs window coating
molded in pastel pink transparent package.
MIE-526A2U
Package Dimensions
φ5.05
(.200)
Unite: mm ( inches )
5.47
(.215)
7.62
(.300)
5.90
(.230)
Features
l
l
l
l
l
High radiant power and high radiant intensity
Standard T-1 3/4 (
φ
5mm) package
Peak wavelength
λ
p
= 940 nm
Good spectral matching to si-photodetector
Radiant angle : 25°
1.00
(.040)
FLAT DENOTES CATHODE
23.4 0MIN.
(.920)
.50 TYP.
(.020)
1.00MIN
(.040)
2.54
(.100)
A
C
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Power Dissipation
Peak Forward Current(300pps,10µs pulse)
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
120
1
100
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unit
mW
A
mA
V
Unity Opto Technology Co., Ltd.
11/17/2000