GaAs HIGH POWER T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-544A4 is an infrared emitting diode utilizing
GaAs with AlGaAs window coating chip technology.
It is molded in water clear plastic package.
7.62
(.300)
MIE-544A4
Unit: mm(inch)
Package Dimensions
φ
5.05
(.199)
5.47
(.215)
5.90
(.230)
1.00
(.039)
SEE NOTE 2
FLAT DENOTES CATHODE
Features
l
High radiant power and high radiant intesity
Suitable for DC and high pulse current operation
Standard T-1 3/4 (
φ5mm)
package, radiant angle : 40°
Peak wavelength
λ
P
=940 nm
Good spectral matching to si-photodetecto
2.54 NOM.
(.100)
SEE NOTE 3
0.50 TYP.
(.020)
23.40 MIN.
(.921)
l
l
l
l
1.00MIN.
(.039)
A
C
Notes :
1. Tolerance is ±0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Power Dissipation
Peak Forward Current
Continuous Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
100
1
50
5
-55 C to +100 C
o
o
-55 C to +100 C
o
o
Unit
mW
A
mA
V
260
o
C for 5 seconds
Unity Opto Technology Co., Ltd.
11/17/2000
UOT [ UNITY OPTO TECHNOLOGY ]
