AlGaAs/GaAs T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-814A2 is an infrared emitting diode utilizing
GaAs with AlGaAs window coating chip technology.
It is molded in water clear plastic package.
6.70±0.20
(.264±.008)
φ
5.00±0.20
(.197±.008)
MIE-814A2
Package Dimensions
Unit: mm ( inches )
1.30 max
(.051)
Features
l
l
l
l
2.00-
(.079)
0.50
(.020)
28 typ
(1.102)
High radiant power and high radiant intesity
Suitable for DC and high pulse current operation
Peak wavelength
λ
P
=940 nm
Good spectral matching to Si-Photodetector
2.54NOM.
(.100)
2.00±1.00
(.079±.039)
C
A
NOTES :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ T
A
=25 C
Parameter
Power Dissipation
Peak Forward Current
Continuous Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
150
1
100
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unit
mW
A
mA
V
o
Unity Opto Technology Co., Ltd.
02/04/2002
UOT [ UNITY OPTO TECHNOLOGY ]
