10N50
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Preliminary
SYMBOL
V
DSS
V
GSS
I
D
I
DM
I
AR
E
AS
E
AR
dv/dt
Power MOSFET
RATINGS
500
±30
10 (Note2)
40 (Note
2)
UNIT
V
V
A
A
A
mJ
mJ
V/ns
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
Continuous (T
C
=25°C)
Pulsed (Note
3)
Avalanche Current (Note
3)
Single Pulsed (Note
4)
Avalanche Energy
Repetitive (Note
5)
Peak Diode Recovery dv/dt (Note
5)
Drain Current
10
388
14.3
4.5
TO-220
143
T
C
=25°C
W
TO-220F1
48
P
D
Power Dissipation
TO-220
1.14
Derate above 25°C
W/°C
TO-220F1
0.38
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L = 7mH, I
AS
= 10A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
5. I
SD
≤
10A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F1
TO-220
TO-220F1
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
62.5
0.87
2.58
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-531.a
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