UNISONIC TECHNOLOGIES CO., LTD
15N06
N -CHANNEL ENHANCEMENT
MODE LOW THRESHOLD
POWER MOS TRANSISTOR
DESCRIPTION
The UTC
15N06
uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
Power MOSFET
FEATURES
* R
DS(ON)
<100mΩ @V
GS
=5V, I
D
=7.5A
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
15N06L-TA3-T
15N06G-TA3-T
15N06L-TF3-T
15N06G-TF3-T
15N06L-TN3-R
15N06G-TN3-R
Package
TO-220
TO-220F
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-260.C
UTC-IC [ UNISONIC TECHNOLOGIES ]
