20N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
600
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±20
V
Continuous
Pulsed
20
A
Drain Current
IDM
80
A
Avalanche Energy
Power Dissipation
Single Pulsed(Note 2)
TO-3P
EAS
1200
300
mJ
PD
W
TO-247
370
Junction Temperature
Storage Temperature
TJ
+150
-55~+150
°C
°C
TSTG
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. VDD=50V, Starting TJ=25°С, Peak IAS=20A, L=6mH
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
0.42
UNIT
TO-3P
TO-247
Junction to Case
θJC
°С/ W
0.34
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS ID=250µA, VGS=0V
IDSS VDS=600V, VGS=0V
GS=+20V, VDS=0V
VGS=-20V, VDS=0V
600
V
10 µA
+100 nA
-100 nA
Forward
V
Gate- Source Leakage Current
IGSS
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
2
4.0
V
VGS=10V, ID=10A, Pulse test,
t≤300µs, duty cycle d≤2%
Static Drain-Source On-State Resistance
RDS(ON)
0.32 0.45
Ω
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
4500
420
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
VGS=0V, VDS=25V, f=1MHz
140
QG
QGS
QGD
tD(ON)
tR
150 170 nC
VGS=10V, VDS=300V, ID=10A
(Note 1, 2)
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
29
60
20
43
70
40
40 nC
85 nC
40
60
90
60
ns
ns
ns
ns
VGS=10V, VDS=300V, ID=10A,RG=2Ω,
(Note 1, 2)
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
Current
IS
ISM
VSD
trr
VGS=0V
20
80
A
A
Maximum Body-Diode Pulsed Current
Repetitive
IF=IS, VGS=0V, Pulse test,
t≤300µs, duty cycle d≤2%
IF=IS,VR=100V,-di/dt=100A/µs(Note 1)
Drain-Source Diode Forward Voltage
1.5
V
Body Diode Reverse Recovery Time
600
ns
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R502-587.E
www.unisonic.com.tw
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