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2N60L 参数 Datasheet PDF下载

2N60L图片预览
型号: 2N60L
PDF下载: 下载PDF文件 查看货源
内容描述: 2安培, 􀀁600 / 650伏特N沟道MOSFET [2 Amps,􀀁600/650 Volts N-CHANNEL MOSFET]
分类和应用:
文件页数/大小: 8 页 / 273 K
品牌: UTC-IC [ UNISONIC TECHNOLOGIES ]
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UNISONIC TECHNOLOGIES CO., LTD
2N60L
2 Amps, 600/650 Volts
N-CHANNEL MOSFET
DESCRIPTION
The UTC
2N60L
is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
Power MOSFET
FEATURES
* R
DS(ON)
= 5Ω@V
GS
= 10V
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (C
RSS
= typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
*Pb-free plating product number: 2N60LL
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Package
Normal
Lead Free Plating
2N60L-x-TA3-T
2N60LL-x-TA3-T
TO-220
2N60L-x-TF3-T
2N60LL-x-TF3-T
TO-220F
2N60L-x-TM3-T
2N60LL-x-TM3-T
TO-251
2N60L-x-TN3-R
2N60LL-x-TN3-R
TO-252
2N60L-x-TN3-T
2N60LL-x-TN3-T
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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Copyright © 2008 Unisonic Technologies Co., Ltd
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