UTC 2N7000
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
DESCRIPTION
The UTC 2N7000 has been designed to minimize
on-state resistance while provide rugged, reliable, and fast
switching performance. It can be used in most applications
requiring up to 400mA DC and can deliver pulsed currents
up to 2A. The product is particularly suited for low voltage,
low current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications
MOSFET
1
FEATURES
*High density cell design for low R
DS(ON)
*Voltage controlled small signal switch
*Rugged and reliable
*High saturation current capability
1: SOURCE
2: GATE
TO-92
3: DRAIN
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C )
PARAMETER
Drain-Source Voltage
Drain-Gate Voltage(R
GS
≤1MΩ)
Gate -Source Voltage-Continuous
-Non Repetitive (tp<50µs)
Maximum Drain Current-Continuous
-Pulsed
Maximum Power Dissipation
Derated above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes, 1/16” from Case
for 10 Seconds
T
J,
T
STG
T
L
P
D
I
D
SYMBOL
V
DSS
V
DGR
V
GSS
RATINGS
60
60
±20
±40
115
800
400
3.2
-55 to +150
300
UNIT
V
V
V
mA
mW
mW/°C
°C
°C
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance, Junction-to-Ambient
SYMBOL
R
θJA
RATINGS
312.5
UNIT
°C/W
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R201-064,A
UTC-IC [ UNISONIC TECHNOLOGIES ]
