UTC 2SA1837
PNP EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER
APPLICATIONS DRIVER STAGE
AMPLIFIER APPLICATIONS
FEATURES
* High Transition Frequency: f
T
=70MH
Z
(Typ.)
* Complementary to UTC 2SC4793
1
TO-220F
1: BASE
2: COLLECTOR
3: EMITTER
ABSOLUTE MAXIMUM RATINGS
(Ta = 25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Ta=25℃
T
C
=25℃
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
Tstg
RATINGS
-230
-230
-5
-1
-0.1
2.0
20
150
-55 ~ 150
UNIT
V
V
V
A
A
W
℃
℃
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base -Emitter Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
V
(BR) CEO
I
CBO
I
EBO
h
FE
V
CE (sat)
V
BE
f
T
C
ob
TEST CONDITIONS
I
C
= -10mA, I
B
=0
V
CB
= -230V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -5V, I
C
= -100mA
I
C
= -500mA
,
I
B
= -50mA
V
CE
= -5V, I
C
= -500mA
V
CE
= -10V, I
C
= -100mA
V
CB
= -10V, I
C
=0, f=1MHz
MIN
-230
TYP
MAX
-1.0
-1.0
320
-1.5
-1.0
UNIT
V
μA
μA
V
V
MHz
pF
100
70
30
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R219-002,A
UTC-IC [ UNISONIC TECHNOLOGIES ]
