Transys
Electronics
L I M I T E D
SOT-89 Plastic-Encapsulated Transistors
2SB1132
FEATURES
Power dissipation
P
CM
:
0.5
W (Tamb=25℃)
3.
EMITTER
TRANSISTOR (PNP)
SOT-89
1.
BASE
2.
COLLECTOR
1
2
3
Collector current
-1
A
I
CM
:
Collector-base voltage
V
V
(BR)CBO
: -40
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=
-50
µA,
I
E
=0
Ic=
-1
mA, I
B
=0
I
E
=
-50
µA,
I
C
=0
V
CB
=
-20
V, I
E
=0
V
EB
=
-4
V, I
C
=0
V
CE
=
-3
V, I
C
=
-100
mA
I
C
=
-500
mA, I
B
=
-50
mA
V
CE
=
-5
V, I
C
=
-50
mA, f=
30
MHz
V
CB
=
-10
V, I
E
=0, f=
1
MHz
-40
-32
-5
-0.5
-0.5
82
390
-0.5
150
20
30
µA
µA
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
P
82-180
BAP
Q
120-270
BAQ
R
180-390
BAR
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