Transys
Electronics
L I M I T E D
SOT-89 Plastic-Encapsulated Transistors
2SB1260
TRANSISTOR (PNP)
SOT-89
1. BASE
FEATURES
Power dissipation
0.5
P
CM
:
Collector current
-1
I
CM
:
Collector-base voltage
-80
V
(BR)CBO
:
W (Tamb=25℃)
A
V
2. COLLECTOR
3. EMITTER
1
2
3
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
unless otherwise specified)
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
Test
conditions
MIN
-80
-80
-5
-1
-1
82
390
-0.4
V
MAX
UNIT
V
V
V
µA
µA
Ic=-50µA , I
E
=0
I
C
= -1mA , I
B
=0
I
E
=-50µA, I
C
=0
V
CB
=-60 V , I
E
=0
V
EB
=-4 V ,
I
C
=0
V
CE
=-3V, I
C
= -0.1A
I
C
=-500 mA, I
B
= -50mA
V
CE
= -5V, I
C
=- 50mA
Transition frequency
f
T
f =
30MHz
80
MHz
CLASSIFICATION OF h
FE
Rank
Range
P
82-180
Q
120-270
R
180-390
Marking
ZL
UTC-IC [ UNISONIC TECHNOLOGIES ]
