UTC 2SB688
PNP EPITAXIAL SILICON TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION
FEATURES
* Complementary to 2SD718.
* Recommended for 45 ~ 50W Audio Frequency Amplifier
Output Stage.
1
TO-3P
1: BASE 2: COLLECTOR 3: EMITTER
*Pb-free plating product number: 2SB688L
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Collector Power Dissipation (T
C
=25℃)
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
RATINGS
-120
-120
-5
-10
-1
80
150
-40 ~ +150
UNIT
V
V
V
A
A
W
℃
℃
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
TEST CONDITIONS
V
CB
= -120V, I
E
= 0
V
EB
= -5V, I
C
= 0
I
C
= -50mA, I
B
= 0
V
CE
= -5V, I
C
= -1A
I
C
= -5A, I
B
= -0.5A
V
CE
= -5A, I
C
= -5A
V
CE
= -5A, I
C
= -1A
V
CB
= -10V, I
E
= 0, f=1MHz
MIN
TYP
MAX
-10
-10
160
-2.5
-1.5
10
280
UNIT
µA
µA
V
V
V
MHz
pF
-120
55
CLASSIFICATION OF hFE
RANK
RANGE
R
55 ~ 110
O
80 ~ 160
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R214-007,A
www.unisonic.com
UTC-IC [ UNISONIC TECHNOLOGIES ]
