欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SB772S 参数 Datasheet PDF下载

2SB772S图片预览
型号: 2SB772S
PDF下载: 下载PDF文件 查看货源
内容描述: 中功率低电压晶体管 [MEDIUM POWER LOW VOLTAGE TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 28 K
品牌: UTC-IC [ UNISONIC TECHNOLOGIES ]
 浏览型号2SB772S的Datasheet PDF文件第2页  
UTC 2SB772S
PNP EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LOW VOLTAGE
TRANSISTOR
DESCRIPTION
The UTC 2SB772S is a medium power low voltage
transistor, designed for audio power amplifier, DC-DC
converter and voltage regulator.
1
FEATURES
*High current output up to 3A
*Low saturation voltage
*Complement to 2SD882S
TO-92
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation( Tc=25°C)
Collector Dissipation( Ta=25°C)
Collector Current(DC)
Collector Current(PULSE)
Base Current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Pc
Ic
Ic
I
B
T
j
T
STG
VALUE
-40
-30
-5
10
1
-3
-7
-0.6
150
-55 ~ +150
UNIT
V
V
V
W
W
A
A
A
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C,unless otherwise specified)
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain(note 1)
SYMBOL
TEST CONDITIONS
V
CB
=-30V,I
E
=0
V
EB
=-3V,Ic=0
V
CE
=-2V,Ic=-20mA
V
CE
=-2V,Ic=-1A
Ic=-2A,I
B
=-0.2A
Ic=-2A,I
B
=-0.2A
V
CE
=-5V,Ic=-0.1A
V
CB
=-10V,I
E
=0,f=1MHz
MIN
TYP
MAX
-1000
-1000
UNIT
nA
nA
I
CBO
I
EBO
h
FE1
h
FE2
Collector-Emitter Saturation Voltage
V
CE
(sat)
Base-Emitter Saturation Voltage
V
BE
(sat)
Current Gain Bandwidth Product
f
T
Output Capacitance
Cob
Note 1:Pulse test:PW<300µs,Duty Cycle<2%
30
100
200
150
-0.3
-1.0
80
45
400
-0.5
-2.0
V
V
MHz
pF
CLASSIFICATION OF hFE
RANK
RANGE
Q
100-200
P
160-320
E
200-400
UTC
UNISONIC TECHNOLOGIES CO. LTD
1