2SC2655
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
2SC2655
Power Amplifier Applications
Power Switching Applications
Industrial Applications
Unit: mm
•
•
•
•
Low saturation voltage: V
CE (sat)
= 0.5 V (max) (I
C
= 1 A)
High collector power dissipation: P
C
= 900 mW
High-speed switching: t
stg
= 1.0
μs
(typ.)
Complementary to 2SA1020.
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
50
50
5
2
0.5
900
150
−55
to 150
Unit
V
V
V
A
A
mW
°C
°C
JEDEC
JEITA
TOSHIBA
TO-92MOD
―
2-5J1A
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09
UTC-IC [ UNISONIC TECHNOLOGIES ]
