UTC 2SC2881
NPN EPITAXIAL SILICON TRANSISTOR
VOLTAGE AMPLIFIER
APPLICATIONS POWER
AMPLIFIER APPLICATIONS
FEATURES
* High voltage: V
CEO
= 120V
* High transition frequency: f
T
=120MHz(typ.)
* Pc=1.0 ~ 2.0 W(mounted on ceramic substrate)
* Complementary to 2SA1201
1
SOT-89
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
SYMBOL
RATINGS
120
120
5
800
160
500
1000
150
-55 ~ 150
UNIT
V
V
V
mA
mA
mW
°C
°C
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Collector power dissipation
P
C
(Note 1)
Junction temperature
T
j
Storage temperature range
T
stg
Note 1: Mounted on ceramic substrate( 250mm
2
×0.8t
)
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
SYMBOL
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
f
T
C
ob
TEST CONDITION
I
C
=10mA, I
B
=0
I
E
=1mA, Ic=0
V
CB
=120V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=100mA
I
C
=500mA, I
B
=50mA
V
CE
=5V, I
C
=500mA
V
CE
=5V, I
C
=100mA
V
CB
=10V, f=1MHz, I
E
=0
MIN
120
5
TYP
MAX UNIT
V
V
μA
μA
V
V
MHz
pF
80
0.1
0.1
240
1.0
1.0
120
30
CLASSIFICATION OF h
FE
RANK
RANGE
O
80 - 160
Y
120 - 240
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R208-032,A
UTC-IC [ UNISONIC TECHNOLOGIES ]
