UTC 2SC3356
NPN SILICON EPITAXIAL TRANSISTOR
HIGH FREQUENCY LOW NOISE
AMPLIFIER
FEATURES
*Low Noise and High Gain
*High Power Gain
2
1
MARKING
R25
3
SOT-23
1: EMITTER
2: BASE
3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
P
T
T
j
T
stg
RATING
20
12
3
100
200
150
-65 ~ +150
UNIT
V
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain bandwidth Product
Feed-Back Capacitance
Noise figure
SYMBOL
I
CBO
I
EBO
h
FE
fT
Cre
NF
TEST CONDITIONS
V
CB
=10V, I
E
=0
V
EB
=1V, I
C
=0
V
CE
=10V, I
C
=20mA
V
CE
=10V, I
C
=20mA
V
CB
=10V, I
E
=0, f=1.0MHz
V
CE
=10V, I
C
=7mA, f=1.0GHz
MIN
TYP
MAX
1.0
1.0
300
UNIT
µA
µA
GHz
pF
dB
50
7
1.0
2.0
CLASSIFICATION OF hFE
RANK
RANGE
A
50-160
B
160-240
C
240-300
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R206-024,B
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