2SC3648
■
NPN EPITAXIAL SILICON TRANSISTOR
I
C
- V
CE
I
C
- V
CE
1000
Collector Current, Ic (mA)
TYPICAL CHARACTERICS
800
Collector Current, Ic (mA)
700 100mA
90mA
600
500
400
300
200
100
0
0
200
80mA
70mA
60mA
50mA
40mA
30mA
20mA
10mA
800
600
400
200
0
4.0mA
3.5mA
3.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
I
B
=0
70 80
400
600
I
B
=0
800
1000
0
10
20
30
40
50
60
Collector to Emitter Voltage, V
CE
(mV)
I
C
- V
BE
1000
V
CE
= 5V
1000
7
5
Collector to Emitter Voltage, V
CE
(V)
h
FE
- I
C
Pulse
Collector Current, Ic (mA)
800
600
400
200
0
DC Current Gain, h
FE
3
2
100
7
5
3
2
V
CE
=2V
V
CE
=5V
V
CE
=10V
10
7
5
0
0.2
0.4
0.6
0.8
1.0
1.2
3
3
5
7
10
2
3
5
7
100
2
3
5
7
1000
2
Base to Emitter Voltage, V
BE
(V)
Collector Current, I
C
(mA)
C
ob
- V
CB
Collector-to-Emitter Saturation Voltage,
V
CE (sat)
(V)
V
CE(sat)
- I
C
F= 1MH
Z
10
7
5
3
2
100
Output Capacitance, C
ob
(pF)
7
5
3
2
I
C
/I
B
=10
1.0
10
7
5
3
2
7
5
3
2
0.1
7
5
3
2
1.0
1.0
2
3
5
7
10
2
3
5
7
100
2
3
5
7
10
2
3
5
7
100
2
3
5
7
1000
2
Collector to Base Voltage V
CB
(V)
,
Collector Current, I
C
(mA)
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