2SC5353
TOSHIBA Transistor
Silicon NPN Triple Diffused Type (PCT process)
2SC5353
Switching Regulator and High Voltage Switching
Applications
High-Speed DC-DC Converter Applications
Unit: mm
•
•
Excellent switching times: t
r
= 0.7
μs
(max), t
f
= 0.5
μs
(max)
High collectors breakdown voltage: V
CEO
= 800 V
Absolute Maximum Ratings
(Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25°C
Tc = 25°C
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
900
800
7
3
5
1
2.0
25
150
−55
to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
―
SC-67
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-10
UTC-IC [ UNISONIC TECHNOLOGIES ]
