UTC 2SC5569 NPN EPITAXIAL SILICON TRANSISTOR
DC/DC CONVERTER
APPLICATIONS
FEATURES
*High current capacitance.
*Low collector-to-emitter saturation voltage.
*High-speed switching.
*High allowable power dissipation.
*Complementary to 2SA2016.
1
APPLICATIONS
*Relay drivers, lamp drivers, motor drivers, strobes
SOT-89
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS (
Ta=25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Tc=25°C
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
Icp
I
B
Pc
T
j
T
stg
2
VALUE
80
50
6
7
10
1.2
1.3*
3.5
150
-55 ~ +150
UNIT
V
V
V
A
A
A
W
°C
°C
* Mounted on ceramic board (250mm ×0.8mm)
ELECTRICAL CHARACTERISTICS
(Ta=25℃
,
unless otherwise specified)
PARAMETER
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Gain Bandwidth Product
Output Capacitance
Turn-On Time
Storage Time
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
Cob
t
on
t
stg
TEST CONDITIONS
Ic=10μA,I
E
=0
Ic=1mA,R
BE
=∞
I
E
=10μA,I
E
=0
V
CB
=40V,I
E
=0
V
EB
=4V,Ic=0
V
CE
=2V,Ic=500mA
Ic=3.5A,I
B
=175mA
Ic=2A,I
B
=40mA
Ic=2A,I
B
=40mA
V
CE
=10V,Ic=500mA
V
CB
=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
MIN
80
50
6
TYP
MAX
UNIT
V
V
V
μA
μA
mV
mV
V
MHz
pF
ns
ns
200
160
110
0.83
330
28
30
420
0.1
0.1
560
240
170
1.2
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R208-031,A
UTC-IC [ UNISONIC TECHNOLOGIES ]
