UTC 2SC5765
NPN EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER AMPLIFIER
STROBO FLASH
DESCRIPTION
*
medium power amplifier applications
*
strobo flash applications
1
FEATURES
*Low Saturation Voltage: V
CE
(sat) = 0.27 V (max.),
(Ic = 3A / I
B
=60 mA)
TO-92SP
1.EMITTER
2.COLLECTOR
3.BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
V
CBO
V
CEO
V
EBO
RATING
UNIT
V
V
V
A
A
mW
°C
°C
15
10
7
5(DC)
Collector Current
Ic
9(PLUSED)
Collector Power Dissipation
Pc(Note 1)
550
Junction Temperature
T
j
150
Storage Temperature
T
stg
-55 ~ +150
Note 1: When a device is mounted on a glass epoxy board (35 mm*30 mm*1mm)
ELECTRICAL CHARACTERISTICS
(Ta=25°C,unless otherwise specified)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
SYMBOL
BV
CEO
I
CBO
I
EBO
h
FE 1 (Note 2)
h
FE2 (Note 2)
TEST CONDITIONS
I
C
=1mA,
I
B
=
0
V
CB
=15V, I
E
= 0
V
EB
= 5V, Ic=0
V
CE
=1.5V,Ic=0.5A
V
CE
=1.5V,Ic=2A
MIN
10
TYP
MAX
0.1
0.1
700
UNIT
V
μA
μA
450
320
170
Collector-Emitter Saturation Voltage
Collector Output Capacitance
Note 2: Pulse test
h
FE3 (Note 2)
V
CE
=1.5V,Ic=5A
V
CE
(sat)
(note 2)
Ic=3A,I
B
=60mA
Cob
V
CB
=10V, I
E
= 0, f=1MHz
0.27
25
V
pF
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R216-002,B
UTC-IC [ UNISONIC TECHNOLOGIES ]
