UTC 2SD1624 NPN EPITAXIAL PLANAR SILICON TRANSISTOR
HIGH CURRENT SWITCHIG
APPLICATION
DESCRIPTION
The UTC 2SD1624 applies to voltage regulators, relay
drivers, lamp drivers, and electrical equipment.
1
FEATURES
*Adoption of FBET, MBIT processes
*Low collector-to-emitter saturation voltage
*Fast switching speed.
*Large current capacity and wide ASO.
SOT-89
MARKING
XX
DG
1:EMITTER
2: COLLECTOR
3: BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Power Dissipation( Tc=25°C)
Collector Current(DC)
Collector Current(PULSE)
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
Icp
T
j
T
STG
VALUE
60
50
6
500
3
6
150
-55 ~ +150
UNIT
V
V
V
mW
A
A
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (note)
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Turn-on Time
SYMBOL
I
CBO
I
EBO
hFE
fT
Cob
V
CE(sat)
V
BE(sat)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
ton
TEST CONDITIONS
VCB=40V,IE=0
VEB=4V,IC=0
VCE=2V, Ic=100mA
VCE=10V, IC=50mA
VCE=10V,f=1MHz
IC=2A,IB=100mA
IC=2A,IB=100mA
IC=10µA,IE=0
IC=1mA,RBE=∞
IE=10µA,IC=0
See test circuit
MIN
TYP
MAX
1
1
560
UNIT
µA
µA
MHz
pF
V
V
V
V
V
ns
100
150
25
0.19
0.94
60
50
6
70
0.5
1.2
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R208-005,A