UTC 2SD1898
NPN EPITAXIAL SILICON TRANSISTOR
POWER TRANSISTOR
FEATURES
*High V
CEO
= 80V
*High I
C
= 1A (DC)
*Good hFE linearity.
*Low V
CE
(sat)
*
Complements the 2SB1260.
1
SOT-89
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C )
PARAMETER
SYMBOL
RATING
100
80
5
1
2
0.5
2
150
-55 ~ +150
UNIT
V
V
V
A
A
W
W
°C
°C
Collector-Base Voltage
V
CBO
Collector-Emitter Voltage
V
CEO
Emitter-Base Voltage
V
EBO
Collector Current(DC)
Ic
Collector Current(PULSE)*1
Icp
Collector Power Dissipation*2
Pc
Collector Power Dissipation*2
Pc
Junction Temperature
T
j
Storage Temperature
T
STG
*1 Duty=/1/2,Pw=200ms
*2
When mounted on a 40*40*0.7 mm ceramic board.
ELECTRICAL CHARACTERISTICS
(Ta=25°C,unless otherwise specified)
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
hFE
V
CE
(sat)
f
T
Cob
P
82-180
TEST CONDITIONS
Ic= 50μA
Ic= 1mA
I
E
=50μA
V
CB
=80V, I
E=
0A
V
EB
=4V , I
C=
0A
V
CE
=3V,Ic= 0.5A
Ic=500mA,I
B
= 20mA
V
CE
= 10V, I
E
= -50 mA, f=100MHz
V
CB
= 10V, I
E
= 0 A, f=1MHz
Q
120-270
MIN
100
80
5
TYP
MAX
UNIT
V
V
V
μA
μA
V
MHz
pF
82
0.15
100
20
1
1
390
0.4
CLASSIFICATION OF hFE
RANK
RANGE
R
180-390
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R208-030,A
UTC-IC [ UNISONIC TECHNOLOGIES ]
