Transys
Electronics
L I M I T E D
TO-220 Plastic-Encapsulate Transistors
2SD313
TRANSISTOR (NPN)
TO-220
1. BASE
2. COLLECTOR
FEATURES
Power dissipation
P
CM
:
1.75
W (Tamb=25℃)
3. EMITTER
Collector current
3
A
I
CM
:
Collector-base voltage
60
V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE
V
CE
=
2
V, I
C
=
0.1
A
I
C
=
2
A, I
B
=
200
mA
V
CE
=
2
V, I
C
=
1
A
V
CE
=
5
V, I
C
=
500
mA
V
CB
=
10
V, I
E
=0,f=
1
MHz
123
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=
100
µA, I
E
=0
Ic=
1
mA, I
B
=0
I
E
=
100
µA, I
C
=0
V
CB
=
60
V, I
E
=0
V
CE
=
60
V, I
E
=0
V
EB
=
4
V, I
C
=0
V
CE
=
2
V, I
C
=
1
A
60
60
5
100
1
100
40
40
1
1.5
8
65
320
µA
mA
µA
V
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF h
FE(1)
Rank
Range
C
40-80
D
60-120
E
100-200
F
160-320
UTC-IC [ UNISONIC TECHNOLOGIES ]
