UTC 2SD468
NPN EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER
AMPLIFIER
FEATURES
*Low frequency power amplifier
*Complement to 2SB562
1
TO-92
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
Ic(peak)
P
C
T
j
T
STG
VALUE
25
20
5
1
1.5
0.9
150
-55 ~ +150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector to base breakdown voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown voltage
Collector Cut-Off Current
DC Current transfer ratio
Collector to emitter saturation
voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
Note: Pulse test
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
V
CE
(sat)
V
BE
f
T
Cob
TEST CONDITIONS
Ic=10µA, I
E
=0
Ic=1mA, R
BE
=∞
I
E
=10µA, I
C
=0
V
CB
=20V, I
E
=0
V
CE
=2V, Ic=0.5A (note)
Ic=0.8A, I
B
=0.08A (note)
V
CE
=2V, Ic=0.5A (note)
V
CE
=2V, Ic=0.5A (note)
V
CB
=10V, I
E
=0, f=1MHz
MIN
25
20
5
85
TYP
MAX
UNIT
V
V
V
µA
V
V
MHz
pF
0.2
0.79
190
22
1
240
0.5
1
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-050,A
UTC-IC [ UNISONIC TECHNOLOGIES ]
