UTC 2SD718
NPN EPITAXIAL SILICON TRANSISTOR
HIGH POWER AMPLIFIER
APPLICATION
FEATURES
*Recommended for 45~50W Audio Frequency
*Amplifier
Output Stage.
*Complementary to 2SB688.
1
TO-3P
1: BASE
2:COLLECTOR
3: EMITTER
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25℃)
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
I
B
Pc
Tj
Tstg
RATINGS
120
120
5
10
1
80
150
-55 ~150
UNIT
V
V
V
A
A
W
℃
℃
ELECTRICAL CHARACTERISTICS
(Ta=25℃,unless otherwise specified))
PARAMETER
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
V
(BR)CEO
I
CBO
I
EBO
H
FE
V
CE(sat)
V
BE
f
T
C
ob
TEST CONDITION
Ic=50mA,I
B
=0
V
CB
=120V,I
E
=0
V
EB
=5V,Ic=0
V
CE
=5V,Ic=1A
Ic=6A,I
B
=0.6A
V
CE
=5V,Ic=5A
V
CE
=5V,Ic=1A
V
CB
=10V,I
E
=0, f=1MHz
MIN
120
TYP
MAX UNIT
10
10
160
2.0
1.5
V
μA
μA
V
V
MHz
pF
55
12
170
CLASSIFICATION OF hFE
RANK
RANGE
R
55-110
O
80-160
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R214-003,A
UTC-IC [ UNISONIC TECHNOLOGIES ]
