3N60
TYPICAL CHARACTERISTICS(Cont.)
On-Resistance Variation vs
.
Drain Current and Gate Voltage
Drain-Source On-Resistance,
R
DS(ON)
(Ω)
Reverse Drain Current, I
DR
(A)
6
5
4
3
2
1
0
Note: T
J
=25℃
Power MOSFET
On State Current vs.
Allowable Case Temperature
10
V
GS
=20V
V
GS
=10V
150℃
1
25℃
0
2
4
6
8
10
12
Drain Current, I
D
(A)
Capacitance Characteristics
(Non-Repetitive)
600
500
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Source-Drain Voltage V
SD
(V)
,
Gate Charge Characteristics
Notes:
1. V
GS
=0V
2. 250µs Test
Gate-Source Voltage, V
GS
(V)
C
ISS =
C
GS
+C
GD
(C
DS
=shorted )
C
OSS
=C
DS
+C
GD
C
RSS
=C
GD
12
10
8
6
4
2
0
V
DS
=300V
V
DS
=480V
V
DS
=120V
Capacitance (pF)
400
300
200
100
0
0.1
C
ISS
C
OSS
Notes:
1. V
GS
=0V
2. f = 1MHz
C
RSS
Note: I
D
=3.0A
0
2
4
6
8
10
Total Gate Charge, Q
G
(nC)
1
10
Drain-SourceVoltage V
DS
(V)
,
Transient Thermal Response Curve
Thermal Response,
θ
JC
(t)
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
Notes :
1.
θ
JC
(t) = 1.18℃/W Max.
2. Duty Factor , D=t 1/t2
3.T
JM
-T
C
=P
DM
×θ
JC
(t)
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square Wave Pulse Duration t
1
(sec)
,
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