4N50
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=500V, V
GS
=0V
Forward
V
GS
=+30V, V
DS
=0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=2A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=400V, I
D
=4A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=250V, I
D
=4A, R
G
=25Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=4A, V
GS
=0V
Body Diode Reverse Recovery Time
t
rr
I
S
=4A, V
GS
=0V,
dI
F
/dt=100A/µs (Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
500
V
25
µA
+100 nA
-100 nA
4.0
2.2
650
90
8
15
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
2.0
1.6
485
65
5
11
3
5
14
21
27
20
38
52
64
50
4
16
1.6
36
33
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-525.c
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