UTC BF423
PNP HIGH-VOLTAGE
TRANSISTORS
FEATURES
PNP HIGH-VOLTAGE TRANSISTORS
*Collector-Emitter Voltage: V
CEO=-250V.
APPLICATIONS
* High voltage application.
* Monitor equipment application.
1
TO-92
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C , unless otherwise specified)
PARAMETERS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
collector current (Peak)
base current
Collector Power dissipation
Junction temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
Ic
P
I
B
Pc
Tj
T
stg
RATING
-250
-250
-5
-50
-100
-50
625
150
-65~+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETERS
Collector Cut-Off Current
Emitter Cut-Off Current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Feedback capacitance
SYMBOL
I
CBO
I
EBO
hFE
V
CE
(sat)
fT
Cre
CONDITIONS
V
CB
= -200V, I
E
=0
V
CB
= -200V
,
I
E
=0, Tj=150°C
V
EB
= -5V, Ic=0
V
CE=-20V,
Ic=-25mA
Ic= -30mA, I
B
= -5mA
V
CE
= -10V ,Ic= -10mA, f=100MHz
V
CB
= -30V, I
E
=0 f=1MHz
MIN
MAX
-10
-10
-50
UNIT
nA
µA
nA
V
MHz
pF
50
-0.6
60
1.6
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-058,A
UTC-IC [ UNISONIC TECHNOLOGIES ]
