UTC BU508 AFI
NPN EPITAXIAL SILICON TRANSISTOR
TO-3PML
1.
2.
BASE
COLLECTOR
EMITTER
SILICON DIFFUSED POWER
TRANSISTOR
DESCRIPTION
The UTC BU508AFI is high voltage, high speed switching
NPN transistors in a plastic envelope, primarily for use in
horizontal deflection circuites of colour television receivers.
1
2
3
3.
Features
* TV color horizontal deflection.
* With TO-3PML fully isolated package.
Absolute Maximum Rating Tc=25°C
PARAMETER
Collector-base voltage(V
BE
=0)
Collector-emitter voltage(I
B
=0)
Emitter-base Voltage(I
C
=0)
Collector peak current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Icp
Ic
Pc
Tj
Tstg
VALUE
1500
700
10
15
8
60
150
-65~150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS Tc=25°C
PARAMETER
Collector-base cut off current
Emitter-base cut off current
Collector-emitter Sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base current peak value
SYMBOL
I
CBO
I
EBO
V
CEO(sus)
V
EBO
V
CE(SAT)
V
BE(SAT)
H
FE
TEST CONDITIONS
V
cE
=1500V, V
BE
=0
V
EB
=5V, I
C
=0
I
C
=100mA, I
B
=0
I
E
=10mA, I
C
=0
I
C
=4.5A, I
B
=2A
I
C
=4.5A, I
B
=2A
I
C
=100mA, V
CE
=5V
MIN
MAX
2.0
100
UNIT
mA
uA
V
V
V
V
700
10
1.0
1.3
30
6
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R214-001,A
UTC-IC [ UNISONIC TECHNOLOGIES ]
