DTC114T
ABSOLUTE MAXIMUM RATINGS
(Ta=25
℃
)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
NPN SILICON TRANSISTOR
RATINGS
UNIT
Collector-Base Voltage
50
V
Collector-Emitter Voltage
50
V
Emitter-Base Voltage
5
V
Collector Current
100
mA
SOT-23/SOT-323
200
mW
Collector Power Dissipation
P
C
SOT-523
150
mW
Junction Temperature
T
J
150
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Input Resistance
Current Gain Bandwidth Product
SYMBOL
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
I
CBO
I
EBO
h
FE
R
IN
f
T
TEST CONDITIONS
I
C
=50μA
I
C
=1mA
I
E
=50μA
I
C
=10mA, I
B
=1mA
V
CB
=50V
V
EB
=4V
V
CE
=5V, I
C
=1mA
V
CE
=10V, I
E
=-5mA, f=100MHz
MIN
50
50
5
TYP
MAX
UNIT
V
V
V
V
μA
μA
kΩ
MHz
100
7
300
10
250
0.3
0.5
0.5
600
13
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www.unisonic.com.tw
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