UTC M28S
NPN EPITAXIAL SILICON TRANSISTOR
AUDIO OUTPUT DRIVER
AMPLIFIER
FEATURES
*Excellent HFE linearity
*High DC Current Gain
*High Power Dissipation
APPLICATION
*Audio output driver amplifier
*General purpose switch
1
TO-92
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C ,unless otherwise specified )
PARAMETERS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation(Ta=25°C
)
Collector current
Base current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
I
B
T
j
T
STG
RATING
40
20
6
850
1.25
0.4
150
-55 ~ +150
UNITS
V
V
V
mW
A
A
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C,unless otherwise specified)
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector cut-off current
Emitter cut-off current
DC current gain(note)
SYMBOL
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
h
FE4
V
CE
(sat)
f
T
Cob
TEST CONDITIONS
Ic=0.1mA
Ic=1mA
I
E
=0.1mA
V
CB
=35V,I
E
=0
V
EB
=5V,Ic=0
V
CE
=1V,Ic=1mA
V
CE
=1V,Ic=0.1A
V
CE1
=1V,Ic=0.3A
V
CE
=1V,Ic=0.5A
Ic=600mA,I
B
=20mA
V
CE
=10V,Ic=50mA,f=1MHz
V
CB
=10V,I
E
=0,f=1MHz
MIN
40
20
6
TYP
MAX
UNIT
V
V
V
nA
nA
100
100
290
300
300
300
100
9
1000
Collector-emitter saturation voltage
Current gain bandwidth product
Output capacitance
0.55
V
MHz
pF
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-015,A
UTC-IC [ UNISONIC TECHNOLOGIES ]
