UNISONIC TECHNOLOGIES CO., LTD
MJD210
PNP SILICON DPAK FOR
SURFACE MOUNT
APPLICATIONS
DESCRIPTION
The UTC MJD210 is designed for low voltage, low-power,
high-gain audio amplifier applications.
PNP SILICON TRANSISTOR
1
TO-252
FEATURE
*Collector-Emitter Sustaining Voltage
V
CEO(SUS)
=-25V (Min) @ I
C
=-10mA
*High DC Current Gain
h
FE
=70 (Min) @ I
C
=-500mA
=45 (Min) @ I
C
=-2A
=10 (Min) @ I
C
=-5A
*Lead Formed for Surface Mount Applications in
Plastic Sleeves (No Suffix)
*Straight Lead Version in Plastic Sleeves (“-1” Suffix)
*Lead Formed Version in 16mm Tape and Reel
(“T4” Suffix)
*Low Collector – Emitter Saturation Voltage
V
CE(SAT)
= -0.3V (Max) @ I
C
=-500mA
= -0.75V (Max) @ I
C
= -2.0 A
*High Current-Gain-Bandwidth Product
f
T
= 65 MHz (Min) @ I
C
= -100 mA
*Annular Construction for Low Leakage
I
CBO
= -100 nA @ Rated V
CB
1
TO-251
ORDERING INFORMATION
Ordering Number
Lead Free Plating
Halogen Free
MJD210L-TM3-T
MJD210G-TM3-T
MJD210L-TN3-T
MJD210G-TN3-T
MJD210L-TN3-R
MJD210G-TN3-R
Package
TO-251
TO-252
TO-252
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
Packing
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2007 Unisonic Technologies Co., Ltd
1 of 5
QW-R213-001.C
UTC-IC [ UNISONIC TECHNOLOGIES ]
