UNISONIC TECHNOLOGIES CO., LTD
MMBT5551
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR
FEATURES
* High Collector-Emitter Voltage:
V
CEO
=160V
* High current gain
3
1
2
SOT-23
*Pb-free plating product number:MMBT5551L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
MMBT5551-x-AE3-6-R MMBT5551L-x-AE3-6-R
Package
SOT-23
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
MMBT5551L-x-AE3-6-R
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Rank
(5)Lead Plating
(1) R: Tape Reel
(2) refer to Pin Assignment
(3) AE3: SOT-23
(4) x: refer to Classification of h
FE
(5) L: Lead Free Plating, Blank: Pb/Sn
MARKING
G1
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