UTC MMBTA14
NPN EPITAXIAL SILICON TRANSISTOR
DARLINGTON TRANSISTOR
DESCRIPTION
The UTC MMBTA14 is a Darlington transistor.
FEATURES
*Collector-Emitter Voltage: V
CES
= 30V
*Collector Dissipation: Pc (mas) = 350 mW
2
1
MARKING
3
1N
SOT-23
1: EMITTER
2: BASE
3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS
(Operating temperature range applies unless otherwise specified.)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation (Tc=25°C
)
Collector Current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CES
V
EBO
Pc
Ic
T
j
T
STG
VALUE
30
30
10
350
500
150
-55 ~ +150
UNIT
V
V
V
mW
mA
°C
°C
ELECTRICAL CHARACTERISTICS
(Tj=25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter on Voltage
Current Gain Bandwidth Product
Pulse test: Pulse Width<300µs, Duty Cycle=2%
SYMBOL
BV
CES
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
TEST CONDITIONS
Ic=100µA,I
B
=0
V
CB
=30V,I
E
=0
V
EB
=10V,Ic=0
V
CE
=5V,Ic=100mA
Ic=100mA,I
B
=0.1mA
V
CE
=5V,Ic=100mA
V
CE
=5V,Ic=10mA,
f=100MHz
MIN
30
MAX
100
100
UNIT
V
nA
nA
V
V
MHz
20000
1.5
2.0
125
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R206-038,A
UTC-IC [ UNISONIC TECHNOLOGIES ]
