MMBTA05
Preliminary
AMPLIFIER TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-base voltage
V
CBO
60
V
Collector-emitter voltage
V
CEO
60
V
Emitter-base voltage
V
EBO
4
V
Collector current - Continuous
I
C
500
mA
Power Dissipation, @T
A
=25℃
P
D
150
mW
Junction Temperature
T
J
125
℃
Storage Temperature
T
STG
-40 ~ +150
℃
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
junction to ambient (Note)
θ
JA
833
junction to case
θ
JC
347
Note:
θ
JA
is measured with the device soldered into a typical printed circuit board.
UNIT
℃/W
℃/W
ELECTRICAL CHARACTERISTICS
(T
A
=25℃, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector cutoff current
ON CHARACTERISTICS
DC current gain
SYMBOL
V
(BR)CEO
V
(BR)EBO
I
CEO
I
CBO
h
FE
TEST CONDITIONS
I
C
=1.0mA, I
B
=0(Note 1)
I
E
=100μA, Ic=0
V
CE
=60V, I
B
=0
V
CB
=60V, I
E
=0
I
C
=10mA, V
CE
=1V
I
C
=100mA, V
CE
=1V
I
C
=100mA, I
B
=10mA
I
C
=100mA, V
CE
=1V
MIN
60
4
0.1
0.1
100
100
0.25
1.2
100
V
V
MHz
TYP
MAX UNIT
V
V
μA
μA
Collector-emitter saturation voltage
V
CE(SAT)
Base-emitter on voltage
V
BE(ON)
SMALL-SIGNAL CHARACTERISTICS
Current gain bandwidth product
f
T
I
C
=10mA, V
CE
=2V, f=100MHz(Note 2)
Note 1. Pulse test: PW<=300μs, Duty Cycle<=2%
2. f
T
is defined as the frequency at which IhfeI extrapolates to unity.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-099.a
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