UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE PNP
TRANSISTOR
DESCRIPTION
The UTC MPSA92/93 are high voltage PNP
transistors, designed for telephone signal switching
and for high voltage amplifier.
FEATURES
* High Collector-Emitter voltage:
V
CEO
=-300V(UTC MPSA92)
V
CEO
=-200V(UTC MPSA93)
*Collector Dissipation:
Pc(max)=625mW
1
TO-92
1:EMITTER
2:BASE
3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS
( Operating temperature range applies unless otherwise specified )
PARAMETER
Collector-Base Voltage
UTC MPSA92
UTC MPSA93
Collector-Emitter Voltage
UTC MPSA92
UTC MPSA93
Emitter-Base Voltage
Collector Dissipation (Ta=25°C
)
Derate Above 25℃
Collector Current
Collector Dissipation (Tc=25°C
)
Derate Above 25℃
Junction Temperature
Storage Temperature
V
CBO
-300
-200
V
V
CEO
V
EBO
Pc
Ic
Pc
T
j
T
STG
-300
-200
-5
625
5
-500
1.5
12
150
-55 ~ +150
SYMBOL
VALUE
UNIT
V
V
mW
mW/℃
mA
W
mW/℃
°C
°C
ELECTRICAL CHARACTERISTICS
(Tj=25°C,unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
UTC MPSA92
UTC MPSA93
Collector-Emitter Breakdown Voltage
UTC MPSA92
UTC MPSA93
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
UTC MPSA92
UTC MPSA93
SYMBOL
BV
CBO
TEST CONDITIONS
Ic=-100µA, I
E
=0
MIN
-300
-200
TYP
MAX UNIT
V
BV
CEO
Ic=-1mA, I
B
=0
-300
-200
-5
-0.25
-0.25
V
V
µA
BV
EBO
I
CBO
I
E
=-100µA, Ic=0
V
CB
=-200V, I
E
=0
V
CB
=-160V, I
E
=0
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-019,A
UTC-IC [ UNISONIC TECHNOLOGIES ]
