UTC PUMT1
PNP EPITAXIAL SILICON TRANSISTOR
The following characteristics apply to both Tr1 and Tr2
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Peak collector current
Peak base current
Collector Power Dissipation (total)
Junction temperature
Storage temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
I
CM
I
BM
P
c
T
j
T
stg
RATING
-50
-40
-5
-100
-200
-200
300
150
-65~+150
UNIT
V
V
V
mA
mA
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
PARAMETER
Collector cut-off current
SYMBOL
I
CBO
CONDITION
I
E
=0, Vc
B
=-30V
I
E
=0, Vc
B
=-30V, Tj=150℃
V
EB
=-4V, Ic=0
Ic=-1mA, V
CE
=-6V
Ic=-50mA, IB=-5mA (note 1)
I
E
=ie=0, V
CB
=-12V, f=1MHz
Ic=-2mA, V
CE
=-12V, f=100MHz
MIN
MAX
-100
-10
-100
UNIT
nA
μA
nA
mV
pF
MHz
Emitter cut-off current
I
EBO
DC current gain
h
FE
Collector-emitter saturation voltage
V
CE(sat)
Collector capacitance
Cc
Transition frequency
f
T
Note:1. Pulse test: tp≤300µs,
δ≤0.02
120
-200
2.2
100
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R218-001,A
UTC-IC [ UNISONIC TECHNOLOGIES ]
