UTC PZTA42/43
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC PZTA42/43 are high voltage transistors,
designed for telephone switch and high voltage
switch.
FEATURES
*Collector-Emitter voltage:
V
CEO
=300V(UTC PZTA42)
V
CEO
=200V(UTC PZTA43)
*High current gain
*Complement to UTC PZTA92/93
*Collector Power Dissipation:
Pc(max)=1000mW
1
2
3
4
SOT-223
1:EMITTER
2,4:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS (
Ta=25°C)
PARAMETER
Collector-Base Voltage
UTC PZTA42
UTC PZTA43
Collector-Emitter Voltage
UTC PZTA42
UTC PZTA43
Emitter-Base Voltage
Collector Power Dissipation
Collector Current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
VALUE
300
200
UNIT
V
V
V
CEO
V
EBO
Pc
Ic
T
j
T
STG
300
200
6
1000
500
150
-55 ~ +150
V
mW
mA
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
UTC PZTA42
UTC PZTA43
Collector-Emitter Breakdown Voltage
UTC PZTA42
UTC PZTA43
Emitter-Base Breakdown Voltage
SYMBOL
BV
CBO
TEST CONDITIONS
Ic=100µA,I
E
=0
MIN
300
200
TYP
MAX
UNIT
V
BV
CEO
Ic=1mA,I
B
=0
300
200
6
V
V
BV
EBO
I
E
=100µA,Ic=0
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R207-005,B
UTC-IC [ UNISONIC TECHNOLOGIES ]
