UTC S8050
NPN EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL NPN
TRANSISTOR
DESCRIPTION
The UTC S8050 is a low voltage high current small
signal NPN transistor, designed for Class B push-pull
audio amplifier and general purpose applications.
1
FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complementary to S8550
TO-92
1:EMITTER
2:BASE
3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C, unless otherwise specified )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation(Ta=25°C
)
Collector Current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
T
j
T
STG
VALUE
30
20
5
1
700
150
-65 ~ +150
UNIT
V
V
V
W
mA
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain(note)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
hFE
1
hFE2
hFE3
V
CE
(sat)
V
BE
(sat)
V
BE
f
T
Cob
TEST CONDITIONS
Ic=100µA,I
E
=0
Ic=1mA,I
B
=0
I
E
=100µA,Ic=0
V
CB
=30V,I
E
=0
V
EB
=5V,Ic=0
V
CE
=1V,Ic=1mA
V
CE
=1V,Ic=150 mA
V
CE
=1V,Ic=500mA
Ic=500mA,I
B
=50mA
Ic=500mA,I
B
=50mA
V
CE
=1V,Ic=10mA
V
CE
=10V,Ic=50mA
V
CB
=10V,I
E
=0
f=1MHz
MIN
30
20
5
TYP
MAX
UNIT
V
V
V
µA
nA
1
100
100
120
40
110
400
0.5
1.2
1.0
100
9.0
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
V
V
V
MHz
pF
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R201-013,A
UTC-IC [ UNISONIC TECHNOLOGIES ]
