UTC TIP107
PNP EPITAXIAL PLANAR TRANSISTOR
PNP EPITAXIAL TRANSISTOR
DESCRIPTION
The UTC TIP107 is designed for using in general purpose
amplifier and switching applications.
FEATURE
*Low VCE(sat)
*High current gain
*Complementary to TIP102
1
TO-220
1:BASE
2:COLLECTOR
3:EMITTER
Absolute Maximum Ratings
(T
C
=25℃)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
Pc
T
J
T
STG
Value
-100
-100
-5
-8
-15
-1
80
150
- 65~150
Units
V
V
V
A
A
A
W
℃
℃
Electrical Characteristics
(T
C
=25℃)
Parameter
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Output Capacitance
Symbol
TEST CONDITIONS
MIN.
-100
MAX. UNIT
V
50
µA
µA
mA
V
CEO
(SUS) I
C
= -30mA, I
B
= 0
I
CEO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
C
Ob
V
CE
= - 50V, I
B
=0
V
CB
= - 100V, I
E
=0
V
BE
= - 5V, I
C
=0
V
CE
= - 4V, I
C
= - 3A
V
CE
= - 4V, I
C
= - 8A
I
C
= - 3A, I
B
= - 6mA
I
C
= - 8A, I
B
= - 80mA
V
CE
= - 4V, I
C
= - 8A
V
CB
= -10V, I
E
=0, f=0.1MHZ
-50
-2
1000 20000
200
-2
-2.5
-2.8
300
V
V
V
pF
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R203-023,A