UTC TIP112
NPN EPITAXIAL PLANAR TRANSISTOR
NPN EPITAXIAL SILICON
DARLINGTON TRANSISTOR
FEATURES
* High DC Current Gain : h
FE
= 1000 @V
CE
=4V, Ic=1A (Min)
* Low Collector-Emitter Saturation Voltage
* Industrial Use
EQUIVALENT TEST
(R1≅10kΩ, R2≅0.6Ω)
B
C
E
TO-220
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (Ta=25°C)
Collector Dissipation (Tc=25°C)
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
Icp
I
B
Pc
Pc
Tj
T
STG
VALUE
100
100
5
2
4
50
2
50
150
-65 ~ +150
UNIT
V
V
V
A
A
mA
W
W
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
Collector-Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output capacitance
SYMBOL
V
CEO(SUS)
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(on)
Cob
TEST CONDITIONS
I
C
=30mA, I
B
=0
V
CB
=100V, I
E
=0
V
CE
=50V, I
B
=0
V
BE
=5V, I
C
=0
I
C
=1A, V
CE
=4V
I
C
=2A, V
CE
=4V
I
C
=2A, I
B
=8mA
V
CE
=4V, I
C
=2A
V
CB
=10V, I
E
=0, f=0.1MHz
MIN.
100
TYP.
MAX.
1
2
2
UNIT
V
mA
mA
mA
1000
500
2.5
2.8
100
V
V
pF
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R203-022,A
UTC-IC [ UNISONIC TECHNOLOGIES ]
