BUD700D
Vishay Telefunken
Silicon NPN High Voltage Switching Transistor
Features
D
D
D
D
D
Monolithic integrated C-E-free-wheel diode
Simple-sWitch-Off Transistor
(SWOT)
HIGH SPEED technology
Planar passivation
100 kHz switching rate
D
D
D
D
D
Very low switching losses
Very low dynamic saturation
Very low operating temperature
Optimized RBSOA
High reverse voltage
Applications
Electronic lamp ballast circuits
2
94 8965
1
1
94 8964
3
2
3
BUD700D
1 Base 2 Collector 3 Emitter
BUD700D –SMD
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings
T
case
= 25°C, unless otherwise specified
Parameter
Collector-emitter voltage
g
Test Conditions
Symbol
V
CEO
V
CEW
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Value
400
500
700
11
2
3
0.75
1
20
150
–65 to +150
Unit
V
V
V
V
A
A
A
A
W
°
C
°
C
Emitter-base voltage
Collector current
Collector peak current
Base current
Base peak current
Total power dissipation
Junction temperature
Storage temperature range
T
case
≤
50
°
C
Document Number 86505
Rev. 1, 20–Jan–99
www.vishay.de
•
FaxBack +1-408-970-5600
1 (8)
VAISH [ VAISHALI SEMICONDUCTOR ]
