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BYG21M-E3/TR 参数 Datasheet PDF下载

BYG21M-E3/TR图片预览
型号: BYG21M-E3/TR
PDF下载: 下载PDF文件 查看货源
内容描述: 二极管, SMA FAST 1A 1000V [DIODE, SMA FAST 1A 1000V]
分类和应用: 二极管光电二极管PC局域网软恢复二极管快速软恢复二极管
文件页数/大小: 5 页 / 89 K
品牌: VAISH [ VAISHALI SEMICONDUCTOR ]
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BYG21K & BYG21M
Vishay General Semiconductor
Fast Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated junction
• Low reverse current
• Soft recovery characteristic
• Fast reverse recovery time
DO-214AC (SMA)
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
t
rr
E
R
T
J
max.
1.5 A
800 V, 1000 V
30 A
1.0 µA
1.6 V
120 ns
20 mJ
150 °C
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for
consumer, automotive and telecommunication.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
Color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Average forward current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Pulse energy in avalanche mode, non repetitive
(inductive load switch off) I
(BR)R
= 1 A, T
J
= 25 °C
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
E
R
T
J
, T
STG
SYMBOL
BYG21K
BYG21K
800
1.5
30
20
- 55 to + 150
BYG21M
BYG21M
1000
V
A
A
mJ
°C
UNIT
Document Number: 88961
Revision: 11-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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