MMBT2907A
New Product
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistor (PNP)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
.056 (1.43
)
.052 (1.33
)
Top View
Mounting Pad Layout
0.031 (0.8)
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
1
2
max. .004 (0.1)
0.035 (0.9)
0.079 (2.0)
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.045 (1.15)
.037 (0.95)
0.037 (0.95)
0.037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Features
• PNP Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
• This transistor is also available in the TO-92 case
with the type designation MPS2907A.
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Marking Code:
2F
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum Ratings & Thermal Characteristics
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
(1)
Power Dissipation
(2)
Thermal Resistance
Junction to Ambient Air
Junction Temperature
Storage Temperature Range
Notes:
(1) FR-5 Board = 1.0 x 0.75 x 0.062 in.
(2) Alumina Substrate = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
–V
CEO
–V
CBO
–V
EBO
–I
C
T
A
= 25°C
Derate above 25°C
T
A
= 25°C
Derate above 25°C
FR-5 Board
Alumina Substrate
P
tot
P
tot
R
ΘJA
T
j
T
S
Value
60
60
5.0
600
225
1.8
300
2.4
556
417
150
–55 to +150
Unit
V
V
V
mA
mW
mW/°C
mW
mW/°C
°C/W
°C
°C
Document Number 88223
10-May-02
www.vishay.com
1
VAISH [ VAISHALI SEMICONDUCTOR ]
