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SI4356ADY 参数 Datasheet PDF下载

SI4356ADY图片预览
型号: SI4356ADY
PDF下载: 下载PDF文件 查看货源
内容描述: N通道30 -V (D -S )的MOSFET [N-Channel 30-V (D-S) MOSFET]
分类和应用:
文件页数/大小: 3 页 / 146 K
品牌: VAISH [ VAISHALI SEMICONDUCTOR ]
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SPICE Device Model Si4356ADY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
CHARACTERISTICS
N-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the
−55
to 125°C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the
−55
to 125°C
temperature ranges under the pulsed 0-V to 10-V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched C
gd
model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 74120
S-51945⎯Rev. A, 03-Oct-05
www.vishay.com
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