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SI4856ADY-RC 参数 Datasheet PDF下载

SI4856ADY-RC图片预览
型号: SI4856ADY-RC
PDF下载: 下载PDF文件 查看货源
内容描述: R- C热模型参数 [R-C Thermal Model Parameters]
分类和应用:
文件页数/大小: 3 页 / 192 K
品牌: VAISH [ VAISHALI SEMICONDUCTOR ]
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Si4856ADY_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
configuration are included. The corresponding values
for the Cauer/Filter configuration are available upon
request.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
RT1
RT2
RT3
RT4
Junction to
CT1
CT2
CT3
CT4
Ambient
2.0053
20.8011
28.2729
28.8060
Ambient
1.6405 m
24.4894 m
358.8053 m
2.5583
Case
N/A
N/A
N/A
N/A
Case
N/A
N/A
N/A
N/A
Foot
468.2017 m
4.8276
7.4177
5.9020
Foot
2.0074 m
39.9180 m
189.7165 m
11.7115 m
Thermal Capacitance (Joules/°C)
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number:74114
Revision 14-Nov-05
www.vishay.com
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