Si6866DQ
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
FEATURES
I
D
(A)
"5.8
"5.0
PRODUCT SUMMARY
V
DS
(V)
20
r
DS(on)
(W)
0.030 @ V
GS
= 4.5 V
0.040 @ V
GS
= 2.5 V
D
TrenchFETr Power MOSFET
D
2.5-V Rated
D
Lead (Pb)-Free Version is RoHS
Compliant
Available
D
1
D
2
TSSOP-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
D
8 D
7 D
6 D
5 D
G
1
G
2
Si6866DQ
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
Ordering Information: Si6866DQ-T1
Si6866DQ-T1—E3 (Lead (Pb)-Free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current (10
ms
Pulse Width)
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
20
"12
"5.8
"4.7
"30
1.5
1.67
1.06
Steady State
Unit
V
"5.0
"4.0
A
1.1
1.2
0.76
−55
to 150
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71102
S-50695—Rev. B, 18-Apr-05
www.vishay.com
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
60
86
38
Maximum
75
105
45
Unit
_C/W
C/W
1
VAISH [ VAISHALI SEMICONDUCTOR ]
