Si7430DP
Vishay Siliconix
N-Channel 150 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
150
R
DS(on)
(Ω)
0.045 at V
GS
= 10 V
0.047 at V
GS
= 8 V
I
D
(A)
a
26
23 nC
25
Q
g
(Typ.)
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• Extremely Low Q
gd
for Reduced dV/dt, Q
gd
and
Shoot-Through
• 100 % R
g
Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
PowerPAK SO-8
6.15 mm
S
1
2
3
S
S
5.15 mm
APPLICATIONS
• Primary Side Switch
• Single-Ended Power Switch
D
G
4
D
8
7
6
5
D
D
D
G
Bottom
View
Ordering Information:
Si7430DP-T1-E3 (Lead (Pb)-free)
Si7430DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
Limit
150
± 20
26
21
7.2
b, c
5.7
b, c
50
32
4.5
b, c
20
20
64
44
5.2
b, c
3.3
b, c
- 55 to 150
260
Unit
V
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
A
mJ
Maximum Power Dissipation
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
°C
THERMAL RESISTANCE RATINGS
Parameter
t
≤
10 s
19
24
Maximum Junction-to-Ambient
b, f
°C/W
Maximum Junction-to-Case (Drain)
Steady State
1.5
1.8
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
Document Number: 74282
S11-0212-Rev. C, 14-Feb-11
www.vishay.com
1
Symbol
R
thJA
R
thJC
Typical
Maximum
Unit
VAISH [ VAISHALI SEMICONDUCTOR ]
