TLWR992.
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
TLW.992.
Parameter
Reverse voltage
DC Forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t
≤
5 s, 1.5 mm from body
preheat temperature
100 °C/ 30 sec.
with cathode heatsink
of 70
mm
2
Test condition
I
R
= 100
µA
T
amb
≤
85 °C
t
p
≤
10
µs
T
amb
≤
85 °C
Symbol
V
R
I
F
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
Value
10
70
0.1
190
125
- 40 to + 110
- 55 to + 110
260
VISHAY
Unit
V
mA
A
mW
°C
°C
°C
°C
Thermal resistance junction/
ambient
R
thJA
200
K/W
Optical and Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Red
TLW.992.
Parameter
Total flux
Test condition
I
F
= 70 mA, R
thJA
= 200 °K/W
Part
TLWR9920
TLWR9921
TLWR9922
Luminous intensity/Total flux
Dominant wavelength
Peak wavelength
Angle of half intensity
Total included angle
Forward voltage
Reverse voltage
Temperature coefficient <
λ
d
Temperature coefficient V
F
I
F
= 70 mA, R
thJA
= 200 °K/W
I
F
= 70 mA, R
thJA
= 200 °K/W
I
F
= 70 mA, R
thJA
= 200 °K/W
I
F
= 70 mA, R
thJA
= 200 °K/W
90 % of Total Flux Captured
I
F
= 70 mA, R
thJA
= 200 °K/W
I
R
= 100
µA
I
F
= 70 mA
I
F
= 70 mA, T > - 25 °C
Symbol
φ
V
φ
V
φ
V
I
V
/φ
V
λ
d
λ
p
ϕ
ϕ
0.9V
V
F
V
R
TCλ
d
TC
VF
1.83
10
611
Min
3000
3500
4000
Typ.
3700
4200
5000
0.7
615
624
± 45
100
2.5
20
17
- 2.9
3.03
634
Max
Unit
mlm
mlm
mlm
mcd/
mlm
nm
nm
deg
deg
V
V
nm/K
mV/K
Forward Voltage Classification
Group
min
Y
Z
0
1
2
3
4
5
6
1.83
1.95
2.07
2.19
2.31
2.43
2.55
2.67
2.79
Forward Voltage (V)
max
2.07
2.19
2.31
2.43
2.55
2.67
2.79
2.91
3.03
www.vishay.com
2
Document Number 83286
Rev. 1.2, 30-Nov-04
VAISH [ VAISHALI SEMICONDUCTOR ]
