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1N4937 参数 Datasheet PDF下载

1N4937图片预览
型号: 1N4937
PDF下载: 下载PDF文件 查看货源
内容描述: 快速开关塑封整流 [Fast Switching Plastic Rectifier]
分类和应用: 开关
文件页数/大小: 4 页 / 73 K
品牌: VISHAY [ VISHAY TELEFUNKEN ]
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1N4933 thru 1N4937
Vishay General Semiconductor
Fast Switching Plastic Rectifier
FEATURES
• Fast switching for high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DO-204AL (DO-41)
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
I
R
V
F
T
J
max.
1.0 A
50 V to 600 V
30 A
200 ns
5.0 μA
1.2 V
150 °C
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for consumer
and telecommunication.
Note
• These devices are not AEC-Q101 qualified.
MECHANICAL DATA
Case:
DO-204AL, molded epoxy body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
A
= 75 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Maximum reverse recovery current
Operating junction and storage temperature range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
RM
T
J
, T
STG
1N4933
50
35
50
1N4934
100
70
100
1N4935
200
145
200
1.0
30
2.0
- 50 to + 150
1N4936
400
280
400
1N4937
600
420
600
UNIT
V
V
V
A
A
A
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
Document Number: 88508
Revision: 27-Oct-09
TEST CONDITIONS
1.0 A
T
A
= 25 °C
T
A
= 100 °C
I
F
= 1.0 A, V
R
= 30 V,
dI/dt = 50 A/μs, I
rr
= 10 % I
RM
4.0 V, 1 MHz
SYMBOL
V
F
I
R
t
rr
C
J
1N4933
1N4934
1N4935
1.2
5.0
μA
100
200
12
ns
pF
www.vishay.com
1
1N4936
1N4937
UNIT
V
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com